ADG1206YCPZ-REEL7 vs DG441DYZ Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ADG1206YCPZ-REEL7 sa pamamagitan ng Analog Devices at DG441DYZ sa pamamagitan ng Renesas Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Analog Devices
ADG1206YCPZ-REEL7 - 16:1 iCMOS Mux, Low Cap, ±15V/12V | ADI
ADG1206YCPZ-REEL7 ✓ NakahandaRenesas Electronics
DG441DYZ - Quad SPST CMOS Analog Switch, 85Ω, 16-SOIC | Renesas
DG441DYZ ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ADG1206YCPZ-REEL7 | DG441DYZ |
|---|---|---|
| Brand | Analog Devices | Renesas Electronics |
| Kategorya | Interface ICs | Interface ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Configuration | 1 Circuit, Single 16:1 Multiplexer | — |
| On-Resistance (Ron) Max | 200 Ω | — |
| On-Capacitance (Typ) | 13 pF | — |
| -3 dB Bandwidth | 490 MHz | — |
| Turn-On Time (tON Typ) | 75 ns | — |
| Turn-Off Time (tOFF Typ) | 85 ns | — |
| Charge Injection | Ultralow (typically < 1 pC) | [DATA_NEEDED: QINJ] |
| Dual-Supply Operation | ±15 V (analog signal range) | — |
| Single-Supply Operation | +12 V (logic-compatible) | — |
| Process Technology | iCMOS (high-voltage CMOS + bipolar + DMOS) | — |
| Address Lines | 4-bit binary (A0, A1, A2, A3) | — |
| ESD Protection (HBM, Analog Inputs) | > 4 kV HBM | — |
| Hanay ng Temperature na Operasyon | -40 °C to +125 °C | — |
| Packhaging | 32-LFCSP-WQ (5 mm × 5 mm) with EP | 16-SOIC (0.154" / 3.90 mm width) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | 3 (per JEDEC J-STD-020) | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| Quiescent Power Dissipation | Ultralow (iCMOS process) | — |
| Switch Type | — | SPST (Single-Pole Single-Throw), 4 independent channels |
| Number of Circuits | — | 4 |
| On-Resistance (Ron) | — | 85 Ω (typical) |
| On-Resistance Flatness | — | [DATA_NEEDED: Ron flatness] |
| Supply Voltage (Single) | — | +5 V to +34 V |
| Supply Voltage (Dual) | — | ±5 V to ±22 V |
| Maximum Signal Voltage | — | 44 V (allows 40 Vp-p signals) |
| Turn-On Time (tON) | — | 250 ns (typical) |
| Turn-Off Time (tOFF) | — | [DATA_NEEDED: tOFF] |
| Bandwidth (-3 dB) | — | 200 MHz (typical) |
| Channel-to-Channel Crosstalk | — | [DATA_NEEDED: crosstalk] |
| Off-Isolation | — | [DATA_NEEDED: off-isolation] |
| Leakage Current (Switch Off) | — | [DATA_NEEDED: Ioff] |
| Logic Input Compatibility | — | TTL and CMOS, with on-chip Vref threshold translator |
| Temperature na Operasyon | — | -40 °C to +85 °C |
| Latch-up Protection | — | Yes (epitaxial CMOS process) |
| Tindminan RoHS | — | Compliant (per Heisener listing) |