BSC011N03LSATMA1 vs BSC010N04LSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC011N03LSATMA1 sa pamamagitan ng Infineon at BSC010N04LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC011N03LSATMA1 BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 ✓ Nakahanda
Infineon
BSC010N04LSATMA1 BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC011N03LSATMA1 BSC010N04LSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 30V —
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TA=25C 37 A —
Pulsed Drain Current (IDM) 100 A (TC) [DATA_NEEDED: pulsed drain current]
On-State Resistance (RDS(on)) at VGS=10V 1.1 mOhm (typ) —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V (typ 1.6 V) —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (PD) at TC=25C 96 W —
Power Dissipation (PD) at TA=25C 2.5 W —
Hanay ng Temperature na Operasyon -55C to +150C -55C to +150C
Packhaging PG-TDSON-8-1 (SuperSO8) PG-TDSON-8 FL (SuperSO8 5x6)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 1
Tindminan RoHS Compliant —
Transistor Polarity — N-Channel
Drain-Source Breakdown Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) Max — +/- 20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 38 A
On-Resistance RDS(on) Max @ VGS=10V — 1.0 mOhm
On-Resistance RDS(on) Test Condition — VGS = 10 V, ID = 50 A
Gate Threshold Voltage VGS(th) Typ — 2 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation (Tc=25C) — 139 W
Power Dissipation (Ta=25C) — 2.5 W
RoHS / Halogen-Free — RoHS compliant, halogen-free
Technology — OptiMOS 5
Avalanche Rated — 100% avalanche tested

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