BSC030N08NS5ATMA1 vs BSC040N10NS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC030N08NS5ATMA1 sa pamamagitan ng Infineon at BSC040N10NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC030N08NS5ATMA1 ✓ NakahandaInfineon
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC040N10NS5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC030N08NS5ATMA1 | BSC040N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Type | N-Channel Power MOSFET | — |
| Technology | OptiMOS 5 | OptiMOS 5 |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | 100 A |
| Pulsed Drain Current (ID,pulse) | 161 A | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| RDS(on) max at VGS=10 V | 3.0 mOhm | — |
| RDS(on) max at VGS=7 V | [DATA_NEEDED: RDS(on) at VGS=7V] | — |
| Power Dissipation (Ta=25C, 1.5mm FR4) | 2.5 W | — |
| Power Dissipation (TC=25C) | 139 W | — |
| Operating Temperature Range (TJ) | -55C to +150C | — |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Lead-Free | Yes | — |
| Gate Drive Logic | Standard 10V, compatible with 12V drive | — |
| Optimized Application | Synchronous Rectification | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Maximum On-Resistance (RDS(on)) | — | 4 mOhm |
| Continuous Drain Current (ID) max | — | 136 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 139 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Output Capacitance Reduction | — | Up to 44% vs previous generation |
| RDS(on) Reduction | — | Up to 43% vs previous generation |
| Automotive Qualification | — | AEC-Q101 (per Infineon OptiMOS 5 family) |