BSC0502NSIATMA1 vs BSC070N10NS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC0502NSIATMA1 sa pamamagitan ng Infineon at BSC070N10NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC070N10NS5ATMA1 BSC070N10NS5ATMA1 - 100V 7mOhm OptiMOS 5 N-MOSFET | Infineon

BSC070N10NS5ATMA1 - 100V 7mOhm OptiMOS 5 N-MOSFET | Infineon

BSC070N10NS5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC0502NSIATMA1 BSC070N10NS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology OptiMOS 5 (Trench MOSFET) OptiMOS 5 (N-channel trench)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC 100 A —
Continuous Drain Current (ID) at TA 26 A —
RDS(on) Max at VGS=10V 2.3 mOhm —
Gate Charge QG (0V to 4.5V) Typ 9.0 nC —
Output Charge QOSS Typ 13.5 nC —
Power Dissipation at TA (Ta=25C) 2.5 W —
Power Dissipation at TC (Tc=25C) 43 W —
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: VGS(th) typical value] —
Hanay ng Temperature na Operasyon -55C to +150C —
Packhaging PG-TDSON-8 (SuperSO8 5x6) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at TC=25C — 80 A
RDS(on) max @ VGS=10V — 7 mOhm
Gate-Source Voltage (VGS) max — 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg]
Power Dissition at TC=25C (Ptot) — 83 W
Power Dissipation at TA=25C — 2.5 W
Hanay ng Temperature ng Junction na Operasyon — -55 C to +150 C
Level ng MSL — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
Typical Application — Synchronous rectification in SMPS

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