BSC0901NSATMA1 vs BSC014N04LSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC0901NSATMA1 sa pamamagitan ng Infineon at BSC014N04LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC0901NSATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 30V | — |
| Technology | N-Channel Trench MOSFET (OptiMOS) | OptiMOS 5 (trench, thin-wafer) |
| Drain-to-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Continuous Drain Current (ID) at Ta | 28 A | — |
| On-State Resistance RDS(on) Max at VGS=10V | 1.9 mOhm | — |
| On-State Resistance RDS(on) Typ at VGS=10V | [DATA_NEEDED: RDS(on) typical] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg total] | — |
| Avalanche Energy (EAS) | 80 mJ | — |
| Power Dissipation (PD) at Tc | 69 W | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55 C to +150 C |
| Packhaging | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | 1 | — |
| Built-in Body Diode | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Configuration | Single N-Channel with Built-in Diode | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, Ta) | — | 31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | — | 96 W |
| Power Dissipation (PD, Ta) | — | 2.5 W |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Tradename | — | OptiMOS |