BSC0993NDATMA1 vs BSC0502NSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC0993NDATMA1 sa pamamagitan ng Infineon at BSC0502NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC0993NDATMA1 BSC0502NSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Series OptiMOS 5 30V —
Configuration Dual N-Channel (Array) —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) @ Ta 17 A —
Packhaging PG-TISON-8 PG-TDSON-8 (SuperSO8 5x6)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (Trench MOSFET)
Channel Mode Enhancement —
Hanay ng Temperature na Operasyon -55C to +150C (junction) -55C to +150C
ESD Protection Yes (integrated) —
Level ng MSL [DATA_NEEDED: MSL level] —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Rds(on) max @ Vgs=10V [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
FET Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TC — 100 A
Continuous Drain Current (ID) at TA — 26 A
RDS(on) Max at VGS=10V — 2.3 mOhm
Gate Charge QG (0V to 4.5V) Typ — 9.0 nC
Output Charge QOSS Typ — 13.5 nC
Power Dissipation at TA (Ta=25C) — 2.5 W
Power Dissipation at TC (Tc=25C) — 43 W
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]

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