BSS205NH6327XTSA1 vs BSZ15DC02KDHXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSS205NH6327XTSA1 sa pamamagitan ng Infineon at BSZ15DC02KDHXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ Nakahanda
Infineon
BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSS205NH6327XTSA1 BSZ15DC02KDHXTMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS205NH6327XTSA1 BSZ15DC02KDHXTMA1
Uri ng Transistor N-Channel MOSFET N-Channel + P-Channel (complementary pair)
Packhaging PG-SOT23 (SC-59, TO-236-3), 3-pin PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Drain-Source Voltage V<sub>DS</sub> 20 V —
Continuous Drain Current I<sub>D</sub> (Ta) 2.5 A —
Power Dissipation P<sub>D</sub> (Ta) 500 mW —
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) 85 mΩ —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: Vgs(th) typical value] —
Hanay ng Temperature na Operasyon -55 °C to +150 °C (junction) —
Gate Drive Voltage Logic-level compatible —
Qualification AEC-Q101 —
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Packaging Tape & Reel (H6327) —
Technology — OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch)
Drain-to-Source Voltage (VDS) Max — 20 V
N-Channel Continuous Drain Current (ID) — 5.1 A
P-Channel Continuous Drain Current (ID) — 3.2 A
N-Channel RDS(on) Max — [DATA_NEEDED: N-ch RDS(on) value in mohm]
P-Channel RDS(on) Max — 55 mOhm (per Infineon part summary)
Gate Drive Level — Super Logic level, 2.5 V rated
Configuration — Common drain (back-to-back source pair)
Total Package Power Dissipation (PD) — 2.5 W @ 25 C (per DigiKey listing)
Temperature ng Junction na Operasyon — -55 C to +175 C
Avalanche Rated — Yes
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes / RoHS compliant

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