BSZ017NE2LS5IATMA1 vs BSZ0901NSIATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ017NE2LS5IATMA1 sa pamamagitan ng Infineon at BSZ0901NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ017NE2LS5IATMA1 BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΩ TSDSON-8

BSZ017NE2LS5IATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ017NE2LS5IATMA1 BSZ0901NSIATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
Drain-Source Voltage (VDS) 25 V 30 V
Continuous Drain Current (TA) 27 A —
Continuous Drain Current (TC) 40 A —
On-Resistance RDS(on) @ VGS=10V 1.7 mΩ —
On-Resistance Test Current 20 A —
Gate-Source Voltage (VGS) Rating ±16 V —
Gate Threshold Voltage VGS(th) 2 V @ 250 µA —
Total Gate Charge Qg 30 nC @ VGS=10V —
Input Capacitance Ciss 2000 pF @ VDS=12V —
Power Dissipation (TA) 2.1 W —
Power Dissipation (TC) 50 W —
Temperature ng Junction na Operasyon -55°C to +150°C —
Packhaging PG-TSDSON-8-FL (8-PowerTDFN) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Series / Family OptiMOS 5 25V —
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
Technology — OptiMOS trench N-channel MOSFET
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Bilang ng Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Hanay ng Temperature na Operasyon — -55 C to +150 C (typical MOSFET range)
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

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