BSZ110N08NS5ATMA1 vs BSC016N06NSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ110N08NS5ATMA1 sa pamamagitan ng Infineon at BSC016N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSZ110N08NS5ATMA1 | BSC016N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | OptiMOS 5 N-Channel Power MOSFET | OptiMOS™ 5 |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Tc | 40 A | — |
| On-Resistance RDS(on) max | 11 mΩ | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| Packhaging | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Configuration | Single MOSFET | — |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -55 °C to +150 °C |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| Product Series | — | OptiMOS™ 5 60V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, TA) | — | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.6 mΩ |
| Total Gate Charge (Qg) | — | 71 nC |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 139 W |
| Gate Drive (recommended) | — | 10 V |