BSZ15DC02KDHXTMA1 vs BSS205NH6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ15DC02KDHXTMA1 sa pamamagitan ng Infineon at BSS205NH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 ✓ Nakahanda
Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ15DC02KDHXTMA1 BSS205NH6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ15DC02KDHXTMA1 BSS205NH6327XTSA1
Uri ng Transistor N-Channel + P-Channel (complementary pair) N-Channel MOSFET
Technology OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) —
Drain-to-Source Voltage (VDS) Max 20 V —
N-Channel Continuous Drain Current (ID) 5.1 A —
P-Channel Continuous Drain Current (ID) 3.2 A —
N-Channel RDS(on) Max [DATA_NEEDED: N-ch RDS(on) value in mohm] —
P-Channel RDS(on) Max 55 mOhm (per Infineon part summary) —
Gate Drive Level Super Logic level, 2.5 V rated —
Configuration Common drain (back-to-back source pair) —
Total Package Power Dissipation (PD) 2.5 W @ 25 C (per DigiKey listing) —
Temperature ng Junction na Operasyon -55 C to +175 C —
Packhaging PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) PG-SOT23 (SC-59, TO-236-3), 3-pin
Uri ng Pagpapasok Surface Mount Surface Mount
Avalanche Rated Yes —
Automotive Qualification AEC-Q101 qualified —
Lead-Free / RoHS Yes / RoHS compliant —
Drain-Source Voltage V<sub>DS</sub> — 20 V
Continuous Drain Current I<sub>D</sub> (Ta) — 2.5 A
Power Dissipation P<sub>D</sub> (Ta) — 500 mW
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) — 85 mΩ
Gate Threshold V<sub>GS(th)</sub> — [DATA_NEEDED: Vgs(th) typical value]
Hanay ng Temperature na Operasyon — -55 °C to +150 °C (junction)
Gate Drive Voltage — Logic-level compatible
Qualification — AEC-Q101
Lead Plating — Pb-free
RoHS Compliance — Compliant
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Packaging — Tape & Reel (H6327)

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