EP1AGX50DF1152I5N vs EP1AGX50DF1152 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1AGX50DF1152I5N sa pamamagitan ng Altera at EP1AGX50DF1152 sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1AGX50DF1152I5N | EP1AGX50DF1152 |
|---|---|---|
| Brand | Altera | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | NRND |
| Family | Arria GX | Arria GX |
| Logic Elements | 50160 | 50,160 |
| Logic Array Blocks (LABs) | 2508 | 2,508 |
| Embedded Memory | 2475072 bits (approximately 2420 Kbit) | — |
| Total Memory Bits | 2475072 | — |
| Number of I/O | 514 | — |
| Number of Transceivers | [DATA_NEEDED: number of transceiver channels] | — |
| Transceiver Data Rate | 3.125 Gbps | — |
| Supply Voltage Core | 1.2 V | — |
| Packhaging | 1152-BBGA (FineLine BGA, flip-chip) | 1152-ball FC-FBGA, 35x35 mm, 1.0 mm pitch |
| Package Code | F1152 | — |
| Temperature na Operasyon | -40C to +100C (Industrial) | — |
| Temperature Grade | I (Industrial) | — |
| Speed Grade | 5 | — |
| Configuration Method | SRAM, JTAG, Passive Serial, Fast Passive Parallel | — |
| Tindminan RoHS | Compliant (lead-free) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Embedded Memory (bits) | — | 2,475,072 |
| Embedded Multipliers (18x18) | — | 514 |
| Maximum User I/O | — | 514 |
| Transceivers | — | 12 (up to 3.125 Gbps) |
| Process Technology | — | 90 nm |
| Core Voltage | — | 1.2 V |
| I/O Banks | — | 8 |
| External Memory Support | — | DDR2 SDRAM, QDRII SRAM, RLDRAM II |
| Hard IP Blocks | — | PCI Express, 8B/10B, SFI PCS |
| Operating Temperature (I grade) | — | -40C to +100C (industrial) |