EP1AGX50DF1152I5N vs EP1AGX50DF1152C6N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1AGX50DF1152I5N sa pamamagitan ng Altera at EP1AGX50DF1152C6N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1AGX50DF1152I5N | EP1AGX50DF1152C6N |
|---|---|---|
| Brand | Altera | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Family | Arria GX | Arria GX |
| Logic Elements | 50160 | 50,160 |
| Logic Array Blocks (LABs) | 2508 | — |
| Embedded Memory | 2475072 bits (approximately 2420 Kbit) | — |
| Total Memory Bits | 2475072 | — |
| Number of I/O | 514 | 350 (typical) |
| Number of Transceivers | [DATA_NEEDED: number of transceiver channels] | — |
| Transceiver Data Rate | 3.125 Gbps | — |
| Supply Voltage Core | 1.2 V | — |
| Packhaging | 1152-BBGA (FineLine BGA, flip-chip) | 1152-BBGA (FC-FBGA) 35 x 35 mm, 1.0 mm pitch |
| Package Code | F1152 | — |
| Temperature na Operasyon | -40C to +100C (Industrial) | 0 C to +85 C (Commercial) |
| Temperature Grade | I (Industrial) | — |
| Speed Grade | 5 | 6 |
| Configuration Method | SRAM, JTAG, Passive Serial, Fast Passive Parallel | SRAM-based, JTAG, Passive Serial, Fast Passive Parallel |
| Tindminan RoHS | Compliant (lead-free) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Logic Cells | — | 50,160 |
| Number of LABs/CLBs | — | 2508 |
| Total RAM Bits | — | 2,475,072 |
| Process Technology | — | 90 nm |
| Core Voltage | — | 1.2 V |
| Maximum Operating Frequency | — | 640 MHz |
| Serial Transceivers | — | Up to 3.125 Gbps |
| Lead Free / RoHS | — | Lead free, RoHS compliant |
| Level ng MSL | — | [DATA_NEEDED: MSL moisture sensitivity level] |