EP1C12F256C7N vs EP1C12F256I7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1C12F256C7N sa pamamagitan ng Altera at EP1C12F256I7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1C12F256C7N | EP1C12F256I7N |
|---|---|---|
| Brand | Altera | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Huling Pagbili |
| Family | Cyclone | Cyclone (EP1C12) |
| Series | Cyclone I | — |
| Logic Elements (LE) | 12060 | — |
| Logic Cells | 12060 | — |
| Total RAM Bits | 239616 | 239,616 |
| User I/O Count | 185 | — |
| Number of LABs/CLBs | 1206 | — |
| Embedded 18x18 Multipliers | 52 | — |
| Number of PLLs | 2 | — |
| Core Voltage | 1.5 V | — |
| Process Technology | 130 nm CMOS | 0.13 μm SRAM-based |
| Maximum Internal Frequency | 320 MHz | — |
| Temperature na Operasyon | 0 C to +85 C (Commercial) | -40°C to +100°C (industrial) |
| Speed Grade | 7 | — |
| Packhaging | 256-FBGA (F256), 17 x 17 mm, 1.0 mm pitch | 256-BGA FineLine |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant (lead-free N suffix) | [DATA_NEEDED: RoHS status] |
| Configuration Method | SRAM, requires external configuration memory (EPCS/EPCQ) | Active Serial (AS), Passive Serial (PS), JTAG |
| Logic Elements | — | 12,060 |
| Embedded M4K RAM Blocks | — | 52 (128 x 36 bits each) |
| User I/O Pins | — | 185 |
| PLLs | — | 2 |
| Supply Voltage (Core) | — | 1.5 V |
| I/O Standards Supported | — | LVTTL, LVCMOS, SSTL, LVDS, PCI |
| Level ng MSL | — | 3 (168 hours) |