EP1C12F256I7N vs EP1C6F256I7L Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1C12F256I7N sa pamamagitan ng Intel at EP1C6F256I7L sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1C12F256I7N | EP1C6F256I7L |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Huling Pagbili | NRND |
| Family | Cyclone (EP1C12) | Cyclone |
| Logic Elements | 12,060 | 5,980 |
| Total RAM Bits | 239,616 | 92,160 |
| Embedded M4K RAM Blocks | 52 (128 x 36 bits each) | — |
| User I/O Pins | 185 | — |
| PLLs | 2 | 2 |
| Packhaging | 256-BGA FineLine | 256-BGA (FBGA, 17x17 mm, 1.0 mm pitch) |
| Temperature na Operasyon | -40°C to +100°C (industrial) | — |
| Process Technology | 0.13 μm SRAM-based | 0.13 µm SRAM |
| Configuration Method | Active Serial (AS), Passive Serial (PS), JTAG | — |
| Supply Voltage (Core) | 1.5 V | — |
| I/O Standards Supported | LVTTL, LVCMOS, SSTL, LVDS, PCI | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Level ng MSL | 3 (168 hours) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Embedded Memory Blocks | — | 20 M4K blocks (4 Kbit each) |
| User I/Os | — | 185 |
| Core Voltage | — | 1.5 V |
| Speed Grade | — | I7 (-7, industrial) |
| Temperature ng Junction na Operasyon | — | -40C to +100C |
| Configuration Modes | — | Passive Serial, Active Serial, JTAG |
| External Memory Support | — | DDR SDRAM, QDR SRAM, FCRAM |
| I/O Standards | — | LVTTL, LVCMOS, PCI, SSTL, HSTL, LVDS |
| Lead-Free Finish | — | Yes (L suffix) |