EP1C20F400C7N vs EP1C20F400C8 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1C20F400C7N sa pamamagitan ng Altera at EP1C20F400C8 sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1C20F400C7N | EP1C20F400C8 |
|---|---|---|
| Brand | Altera | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | NRND |
| Series | Cyclone | Cyclone I |
| Family | Cyclone I | — |
| Logic Elements (LE) | 20,060 | — |
| Logic Array Blocks (LABs) | 2,006 | 2,006 |
| Embedded Memory (bits) | 294,912 (288 Kbits, M4K blocks) | — |
| User I/O Count | 301 | — |
| Embedded 18x18 Multipliers | 52 | — |
| PLLs | 4 | 2 (one per device quadrant) |
| Process Technology | 130 nm CMOS (SRAM-based) | 130 nm CMOS (SRAM-based) |
| Core Voltage | 1.5 V | — |
| Speed Grade | -7 (commercial, ~405 MHz internal) | — |
| Temperature na Operasyon | 0 °C to +85 °C (commercial) | — |
| Packhaging | 400-ball FineLine BGA (FBGA) | 400-ball FBGA (FineLine BGA), 21 × 21 mm, 1.0 mm pitch |
| Uri ng Pagpapasok | Surface Mount | — |
| Configuration Interface | Active Serial (AS) / Passive Serial (PS) / JTAG | — |
| I/O Standards Supported | LVTTL, LVCMOS, SSTL, HSTL, LVDS (via 8 I/O banks) | — |
| External Memory Support | DDR SDRAM, QDR SRAM, FCRAM | — |
| Tindminan RoHS | Compliant (per Altera product page) | [DATA_NEEDED: RoHS status] |
| Logic Elements | — | 20,060 LE |
| Embedded Memory | — | 294,912 bits (288 Kbit) |
| Embedded Multipliers | — | Embedded 18 × 18 blocks |
| Maximum User I/O | — | 301 |
| Core Supply Voltage (VCCINT) | — | 1.5 V |
| I/O Supply Voltages | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Maximum Internal Frequency | — | 275.03 MHz (typical) |
| Configuration Modes | — | Passive Serial (PS), Active Serial (AS), JTAG |
| Operating Temperature (Commercial) | — | 0 °C to +85 °C |
| Configuration Memory | — | SRAM (volatile, reload required at power-up) |