EP1C3T100C6 vs EP1C3T100C8 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1C3T100C6 sa pamamagitan ng Intel at EP1C3T100C8 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1C3T100C6 | EP1C3T100C8 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Huling Pagbili | Tapus ng Buhay |
| Family | Cyclone (Cyclone I) | Cyclone I |
| Logic Elements (LE) | 2,910 | — |
| Logic Array Blocks (LAB) | 65 | — |
| Maximum User I/O | 65 | — |
| Total RAM Bits | 59,904 | 59,904 bits |
| Number of PLLs | 1 | — |
| Maximum Operating Frequency | 405.2 MHz | — |
| Process Technology | 130 nm CMOS | — |
| Core Voltage (VCCINT) | 1.5 V | 1.5 V |
| I/O Voltage (VCCIO) | 1.5 V to 3.3 V | — |
| Speed Grade | -6 (C6) | -8 (commercial) |
| Temperature na Operasyon | 0 C to +85 C (commercial) | 0C to +85C (commercial) |
| Packhaging | TQFP-100 (100-TQFP) | TQFP-100 (14x14 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Programming Interface | JTAG (ByteBlaster / USB-Blaster) | — |
| I/O Standards Supported | LVTTL, LVCMOS, SSTL-2, SSTL-3 | — |
| Core Process | — | 0.13 µm SRAM |
| Logic Elements | — | 2,910 LEs |
| M4K RAM Blocks | — | 13 (4 Kbit each) |
| Embedded Multipliers | — | Not present on EP1C3 |
| PLLs | — | 1 general-purpose PLL |
| Global Clock Networks | — | 8 |
| User I/O Pins | — | 65 |
| Configuration Modes | — | AS, PS, JTAG |
| I/O Standards | — | LVTTL, LVCMOS, SSTL-2/3, LVDS, RSDS |
| Tindminan RoHS | — | Compliant |
| Lifecycle | — | EOL per PDN1810 (since 2019) |