EP1C3T100C8 vs EP1C3T100CB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1C3T100C8 sa pamamagitan ng Intel at EP1C3T100CB sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1C3T100C8 | EP1C3T100CB |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Tapus ng Buhay | Aktibo |
| Family | Cyclone I | Cyclone |
| Core Process | 0.13 µm SRAM | — |
| Core Voltage (VCCINT) | 1.5 V | — |
| Logic Elements | 2,910 LEs | 2,910 |
| Total RAM Bits | 59,904 bits | — |
| M4K RAM Blocks | 13 (4 Kbit each) | — |
| Embedded Multipliers | Not present on EP1C3 | — |
| PLLs | 1 general-purpose PLL | 1 |
| Global Clock Networks | 8 | 8 |
| User I/O Pins | 65 | — |
| Packhaging | TQFP-100 (14x14 mm) | 100-pin TQFP (1.0 mm pitch) |
| Speed Grade | -8 (commercial) | — |
| Temperature na Operasyon | 0C to +85C (commercial) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration Modes | AS, PS, JTAG | — |
| I/O Standards | LVTTL, LVCMOS, SSTL-2/3, LVDS, RSDS | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lifecycle | EOL per PDN1810 (since 2019) | — |
| Embedded RAM Bits | — | 59,904 |
| Embedded RAM Blocks | — | 13 (M4K, 4 Kbit each) |
| Maximum User I/O | — | 65 |
| Process Technology | — | 0.13 µm SRAM |
| Configuration Method | — | Passive Serial, Active Serial, JTAG |
| Supply Voltage (Core) | — | 1.5 V |
| I/O Standards Supported | — | LVTTL, LVCMOS, SSTL-2, SSTL-3 |
| Operating Temperature (Commercial) | — | 0 °C to +85 °C |