EP1C6F256C8N vs EP1C6F256I7L Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1C6F256C8N sa pamamagitan ng Intel at EP1C6F256I7L sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1C6F256C8N | EP1C6F256I7L |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Huling Pagbili | NRND |
| Series | Cyclone | — |
| Family | Cyclone I | Cyclone |
| Logic Elements (LEs) | 5,980 | — |
| Embedded Memory (bits) | 92,160 | — |
| User I/O Pins | 185 | — |
| Number of PLLs | 2 | — |
| Core Voltage (VCCINT) | 1.5 V | — |
| Temperature na Operasyon | 0 °C to +85 °C (Commercial) | — |
| Speed Grade | 8 | I7 (-7, industrial) |
| Packhaging | 256-BGA (FBGA-256), 17 × 17 mm, 1.0 mm pitch | 256-BGA (FBGA, 17x17 mm, 1.0 mm pitch) |
| Uri ng Pagpapasok | Surface Mount | — |
| Process Node | 0.13 µm SRAM | — |
| Configuration Modes | Passive Serial (PS), Active Serial (AS), JTAG | Passive Serial, Active Serial, JTAG |
| I/O Standards Supported | LVTTL, LVCMOS, SSTL, LVDS | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 3 | — |
| Logic Elements | — | 5,980 |
| Total RAM Bits | — | 92,160 |
| Embedded Memory Blocks | — | 20 M4K blocks (4 Kbit each) |
| User I/Os | — | 185 |
| PLLs | — | 2 |
| Process Technology | — | 0.13 µm SRAM |
| Core Voltage | — | 1.5 V |
| Temperature ng Junction na Operasyon | — | -40C to +100C |
| External Memory Support | — | DDR SDRAM, QDR SRAM, FCRAM |
| I/O Standards | — | LVTTL, LVCMOS, PCI, SSTL, HSTL, LVDS |
| Lead-Free Finish | — | Yes (L suffix) |