EP1K100EFI484-2 vs EP1K100FC484-3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1K100EFI484-2 sa pamamagitan ng Intel at EP1K100FC484-3 sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1K100EFI484-2 | EP1K100FC484-3 |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Obsolete |
| Family | ACEX-1K | ACEX-1K |
| Part Number | EP1K100EFI484-2 | — |
| Manufacturer | Intel (formerly Altera) | — |
| Typical Gates | 100,000 | — |
| Logic Elements | 49,152 | 4,992 |
| Logic Cells | 4,992 (typical) | — |
| Total RAM Bits | 49,152 | — |
| Number of EABs | 12 | — |
| Bits per EAB | 4,096 | — |
| Maximum User I/O | 333 | 333 |
| Core Voltage (VCCINT) | 2.5 V | — |
| I/O Voltage (VCCIO) | 3.3 V | — |
| Temperature na Operasyon | -40C to +85C (Industrial) | [DATA_NEEDED: operating temperature grade] |
| Speed Grade | -2 | -3 |
| Packhaging | 484-BBGA (FineLine BGA) | 484-Ball FineLine BGA (FC484) |
| Uri ng Pagpapasok | Surface Mount | — |
| Level ng MSL | 3 (168 Hours) | — |
| Process Technology | 0.18 umm SRAM | 0.18 µm CMOS |
| Configuration Method | JTAG / Passive Serial (volatile SRAM) | SRAM, serial or parallel |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| System Gates | — | 100,000 |
| Maximum Equivalent Gates | — | 257,000 |
| Embedded RAM Bits | — | 49,152 bits |
| Embedded Array Blocks (EABs) | — | 12 |
| Logic Array Blocks (LABs) | — | 624 |
| Core Voltage | — | 2.5 V |
| MultiVolt I/O Support | — | 2.5V / 3.3V / 5V |