EP1K100F1256-2 vs EP1K100EFI484-2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP1K100F1256-2 sa pamamagitan ng Intel at EP1K100EFI484-2 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP1K100F1256-2 EP1K100EFI484-2
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Obsolete Aktibo
Family ACEX 1K ACEX-1K
Logic Elements (LEs) [DATA_NEEDED: exact LE count for EP1K100] —
Typical Gates 100,000 100,000
Maximum Gates 257,000 —
Embedded Array Blocks (EABs) 12 —
Total RAM Bits 49,152 49,152
User I/O Pins 333 —
Packhaging 256-ball FineLine BGA (F1256) 484-BBGA (FineLine BGA)
Speed Grade -2 -2
Core Voltage 2.5 V —
I/O Standards LVTTL, LVCMOS, PCI, SSTL, LVDS —
Configuration Modes Passive Serial, Active Serial, JTAG —
Process Technology 0.18 µm SRAM 0.18 umm SRAM
JTAG (IEEE 1149.1) Yes —
Temperature na Operasyon [DATA_NEEDED: commercial/industrial grade range] -40C to +85C (Industrial)
Uri ng Pagpapasok Surface Mount (BGA) Surface Mount
Tindminan RoHS unknown [DATA_NEEDED: RoHS status]
Level ng MSL [DATA_NEEDED: moisture sensitivity level] 3 (168 Hours)
Part Number — EP1K100EFI484-2
Manufacturer — Intel (formerly Altera)
Logic Elements — 49,152
Logic Cells — 4,992 (typical)
Number of EABs — 12
Bits per EAB — 4,096
Maximum User I/O — 333
Core Voltage (VCCINT) — 2.5 V
I/O Voltage (VCCIO) — 3.3 V
Configuration Method — JTAG / Passive Serial (volatile SRAM)

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