EP1K10TC100-1N vs EP1K10TC100-2N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1K10TC100-1N sa pamamagitan ng Intel at EP1K10TC100-2N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1K10TC100-1N | EP1K10TC100-2N |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Huling Pagbili |
| Family | ACEX-1K | ACEX-1K |
| Series | EP1K10 | — |
| Logic Elements / Cells | 576 | 576 |
| Total Gates (typical) | 10,000 | — |
| Embedded RAM Bits | 12,288 bits | — |
| Logic Array Blocks (LABs) | 72 | 72 |
| Embedded Array Blocks (EABs) | 3 x 4 Kbit | — |
| User I/Os | 66 | — |
| Core Supply Voltage | 2.5 V (2.375 V to 2.625 V) | — |
| Temperature na Operasyon | 0 °C to 70 °C (commercial) | 0 C to +70 C (commercial) |
| Process Technology | 0.22 µm CMOS SRAM | 0.22 um CMOS |
| Packhaging | 100-pin TQFP (14 mm x 14 mm, 1 mm height) | 100-pin TQFP (1.0 mm body, 0.5 mm pitch) |
| Uri ng Pagpapasok | Surface Mount (gull-wing) | Surface Mount |
| Speed Grade | -1N (commercial, slower tier) | -2 |
| Configuration Method | SRAM (external PROM required) | — |
| JTAG Support | Yes (IEEE 1149.1 boundary-scan) | — |
| Tindminan RoHS | Compliant | Lead-free / RoHS compliant |
| Typical Gates | — | 10,000 |
| Embedded Memory (EAB) | — | 12,288 bits |
| Maximum User I/O | — | 66 |
| Core Voltage (VCCINT) | — | 2.5 V |
| I/O Voltage (VCCIO) | — | 1.8 V / 2.5 V / 3.3 V / 5 V |
| Maximum Frequency | — | 200 MHz |
| Configuration Modes | — | Passive Serial, Active Serial, JTAG |