EP1K10TC100-1N vs EP1K10TC100-2NGZ Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1K10TC100-1N sa pamamagitan ng Intel at EP1K10TC100-2NGZ sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1K10TC100-1N | EP1K10TC100-2NGZ |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Family | ACEX-1K | — |
| Series | EP1K10 | ACEX-1K |
| Logic Elements / Cells | 576 | — |
| Total Gates (typical) | 10,000 | — |
| Embedded RAM Bits | 12,288 bits | — |
| Logic Array Blocks (LABs) | 72 | — |
| Embedded Array Blocks (EABs) | 3 x 4 Kbit | — |
| User I/Os | 66 | — |
| Core Supply Voltage | 2.5 V (2.375 V to 2.625 V) | — |
| Temperature na Operasyon | 0 °C to 70 °C (commercial) | 0 °C to 70 °C (TA) |
| Process Technology | 0.22 µm CMOS SRAM | 0.18 µm SRAM-based LUT |
| Packhaging | 100-pin TQFP (14 mm x 14 mm, 1 mm height) | — |
| Uri ng Pagpapasok | Surface Mount (gull-wing) | Surface Mount |
| Speed Grade | -1N (commercial, slower tier) | -2 |
| Configuration Method | SRAM (external PROM required) | — |
| JTAG Support | Yes (IEEE 1149.1 boundary-scan) | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: rohs_status] |
| Number of Logic Elements / Cells | — | 576 |
| Number of LABs / CLBs | — | 72 |
| Total RAM Bits | — | 12288 |
| Number of Gates | — | 56000 (10,000 typical usable) |
| Number of I/O | — | 66 |
| Voltage - Supply | — | 2.375 V to 2.625 V |
| Packhaging / Kaso | — | 100-TQFP |
| Lead-Free Status | — | [DATA_NEEDED: lead_free_status] |
| Level ng MSL | — | [DATA_NEEDED: msl_level] |