EP1K10TC100-2NGZ vs EP1K10TC100-1N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP1K10TC100-2NGZ sa pamamagitan ng Intel at EP1K10TC100-1N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP1K10TC100-2NGZ | EP1K10TC100-1N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Series | ACEX-1K | EP1K10 |
| Number of Logic Elements / Cells | 576 | — |
| Number of LABs / CLBs | 72 | — |
| Total RAM Bits | 12288 | — |
| Number of Gates | 56000 (10,000 typical usable) | — |
| Number of I/O | 66 | — |
| Voltage - Supply | 2.375 V to 2.625 V | — |
| Temperature na Operasyon | 0 °C to 70 °C (TA) | 0 °C to 70 °C (commercial) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (gull-wing) |
| Packhaging / Kaso | 100-TQFP | — |
| Speed Grade | -2 | -1N (commercial, slower tier) |
| Tindminan RoHS | [DATA_NEEDED: rohs_status] | Compliant |
| Lead-Free Status | [DATA_NEEDED: lead_free_status] | — |
| Level ng MSL | [DATA_NEEDED: msl_level] | — |
| Process Technology | 0.18 µm SRAM-based LUT | 0.22 µm CMOS SRAM |
| Family | — | ACEX-1K |
| Logic Elements / Cells | — | 576 |
| Total Gates (typical) | — | 10,000 |
| Embedded RAM Bits | — | 12,288 bits |
| Logic Array Blocks (LABs) | — | 72 |
| Embedded Array Blocks (EABs) | — | 3 x 4 Kbit |
| User I/Os | — | 66 |
| Core Supply Voltage | — | 2.5 V (2.375 V to 2.625 V) |
| Packhaging | — | 100-pin TQFP (14 mm x 14 mm, 1 mm height) |
| Configuration Method | — | SRAM (external PROM required) |
| JTAG Support | — | Yes (IEEE 1149.1 boundary-scan) |