EP2AGZ225FF35C3N vs EP2AGZ225FF35I3N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP2AGZ225FF35C3N sa pamamagitan ng Intel at EP2AGZ225FF35I3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP2AGZ225FF35C3N | EP2AGZ225FF35I3N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Family | Arria II GZ | Arria II GZ |
| Logic Elements (LE) | 224,000 | 224,000 |
| Logic Array Blocks (LAB) | 8,960 | — |
| Embedded Memory (bits) | 14,248,960 | — |
| User I/Os | 554 | — |
| Packhaging | 1152-BBGA, FCBGA | 1152-ball FC-FBGA |
| Process Node | 40 nm | — |
| Speed Grade | 3 | — |
| Temperature Grade | Commercial (0C to +85C) | — |
| Transceivers | Up to 12.5 Gbps | — |
| DSP Blocks | Yes (variable-precision) | — |
| Memory Interfaces | DDR3, DDR2, QDRII+, RLDRAM2 | — |
| PCI Express Hard IP | Gen1, Gen2 | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Embedded Memory | — | 14,248,960 bits (approx. 14.25 Mbit) |
| Logic Array Blocks (LABs) | — | 8,960 |
| User I/O Count | — | 554 |
| Maximum Transceiver Data Rate | — | 6.375 Gbps |
| Transceiver Channels | — | 24 |
| Process Technology | — | 40 nm |
| Core Voltage | — | 0.9 V |
| Temperature na Operasyon | — | -40C to +100C (Industrial) |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Configuration Method | — | SRAM-based (volatile, requires external config device) |
| Maximum User I/O | — | 554 |