EP2C50U484C8N vs EP2C50U484C7 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP2C50U484C8N sa pamamagitan ng Intel at EP2C50U484C7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP2C50U484C8N | EP2C50U484C7 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | NRND |
| Series | Cyclone II | — |
| Family | Cyclone II (90 nm) | Cyclone II |
| Logic Elements (LE) | 50,528 | — |
| Embedded Memory (M4K blocks) | 594,432 bits (129 M4K blocks) | — |
| Embedded 18x18 Multipliers | 86 | 172 |
| PLLs | 4 | — |
| User I/Os | 294 | — |
| I/O Banks | 8 | — |
| Speed Grade | C8 (commercial, mid-tier) | 7 |
| Temperature na Operasyon | 0C to +85C (commercial) | Commercial (0C to +85C) |
| Packhaging | 484-ball FBGA (UBGA-484) | 484-ball FineLine BGA (U484 / 484-FBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Technology | 90 nm low-k CMOS | 90 nm |
| Configuration Methods | Passive Serial, Active Serial, JTAG | — |
| Memory Interface Support | DDR, DDR2, SDR SDRAM, QDRII SRAM | — |
| Tindminan RoHS | Compliant (lead-free) | — |
| Level ng MSL | 3 (168 hours) | — |
| Logic Elements | — | 50,528 |
| Embedded Memory Bits | — | 594,432 bits (4,488 Kbits) |
| Embedded Memory Blocks | — | M4K blocks |
| User I/O Count | — | 294 |
| Number of I/O Banks | — | 8 |
| Phase-Locked Loops (PLLs) | — | 4 |
| Core Voltage | — | 1.2 V |
| Configuration Modes | — | JTAG, Active Serial, Passive Serial, Fast Passive Parallel |