EP2S60F1020C4TT vs EP2S60F1020C3N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP2S60F1020C4TT sa pamamagitan ng Intel at EP2S60F1020C3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP2S60F1020C4TT | EP2S60F1020C3N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Huling Pagbili | NRND |
| Family | Stratix II | Stratix II |
| Process Technology | 90 nm | 90 nm |
| Logic Elements | 60,440 | — |
| Equivalent Logic Elements | 60,440 | — |
| Embedded Memory (bits) | 2,544,192 | 2,544,192 |
| Maximum User I/O | 718 | — |
| DSP Blocks (18x18 multipliers) | [DATA_NEEDED: DSP block count for EP2S60] | — |
| PLLs (Enhanced) | [DATA_NEEDED: PLL count] | — |
| Global Clock Networks | [DATA_NEEDED: global clock count] | — |
| Packhaging | 1020-ball FineLine BGA | 1020-ball FC-FBGA |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Temperature ng Junction na Operasyon | 0C to +85C (commercial, C4 speed grade) | — |
| Speed Grade | C4 | C3 (slowest commercial) |
| Supply Voltage Core | [DATA_NEEDED: VCCINT nominal] | — |
| Memory Interfaces Supported | DDR/DDR2 SDRAM, QDR II/II+ SRAM | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance] | Compliant |
| LE Conversion Note | 60,440 LEs is the legacy 'equivalent LE' figure; modern ALM-based naming differs | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| Logic Elements (LE) | — | 60,440 |
| Logic Array Blocks (LABs) | — | 3,022 |
| Embedded Multipliers (18x18) | — | 36 |
| PLLs | — | 12 |
| Maximum User I/Os | — | 718 |
| Core Voltage | — | 1.2 V |
| Maximum Internal Frequency | — | 717 MHz |
| Temperature na Operasyon | — | 0C to +85C (commercial) |
| Lead-Free | — | Yes |