EP3C40F780C7N vs EP3C80F780C7 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3C40F780C7N sa pamamagitan ng Intel at EP3C80F780C7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3C40F780C7N | EP3C80F780C7 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone III | Cyclone III |
| Logic Elements | 39,600 LE | — |
| Total RAM Bits | 1,161,216 bits | — |
| Embedded Multipliers | 126 (18x18) | — |
| User I/Os | 535 | — |
| Packhaging | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (FineLine BGA) |
| Speed Grade | 7 (C7, commercial) | C7 |
| Process Node | 65 nm TSMC low-power | — |
| Temperature na Operasyon | 0C to +85C (commercial) | 0C to +85C (commercial) |
| Supply Voltage (Core) | 1.2 V | — |
| Configuration Method | JTAG, Active Serial, Passive Serial | — |
| PLLs | 4 | — |
| Global Clock Networks | 20 | 20 |
| Lead-Free / RoHS | Yes (N suffix) | — |
| Moisture Sensitivity Level | MSL3 (per J-STD-020) | — |
| Logic Elements (LE) | — | 81,264 |
| Embedded Memory Bits | — | 2,810,880 |
| Embedded Memory Blocks | — | M9K (9 Kbit each) |
| Embedded 18x18 Multipliers | — | 244 |
| User I/O Pins | — | 429 |
| Phase-Locked Loops (PLLs) | — | 4 |
| Process Technology | — | 65 nm CMOS, low-power |
| Core Supply Voltage (VCCINT) | — | 1.2 V |
| Configuration Scheme | — | SRAM, external flash (EPCS) |
| Tindminan RoHS | — | Compliant |