EP3C55F780C8 vs EP3C55F780C7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3C55F780C8 sa pamamagitan ng Intel at EP3C55F780C7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3C55F780C8 | EP3C55F780C7N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone III | Cyclone III |
| Logic Elements | 55,856 | 55,856 |
| Embedded Memory | 2,396,160 bits (234 M9K blocks) | 2,396,160 bits (approximately 2.4 Mbit) |
| Embedded Multipliers (18x18) | 156 | — |
| User I/O Pins | 377 | — |
| PLLs | 4 | 4 |
| Global Clock Networks | 20 | 20 |
| Process Technology | 65 nm | 65 nm low-power CMOS |
| Core Voltage | 1.2 V | — |
| Packhaging | 780-ball FBGA | 780-ball FineLine BGA |
| Uri ng Pagpapasok | Surface Mount | — |
| Temperature na Operasyon | 0C to +85C (Commercial) | 0C to +85C (commercial, C7 speed grade) |
| Speed Grade | 8 | 7 |
| Configuration Memory | SRAM-based | 8 Kbits (supports PS, FPP, JTAG) |
| Tindminan RoHS | Compliant | Compliant |
| Embedded Memory Blocks | — | 312 M9K blocks |
| Embedded Multipliers | — | 156 (18 x 18) |
| User I/O Count | — | 377 |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank) |