EP3C80F780C7 vs EP3C55F780C7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3C80F780C7 sa pamamagitan ng Intel at EP3C55F780C7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3C80F780C7 | EP3C55F780C7N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone III | Cyclone III |
| Logic Elements (LE) | 81,264 | — |
| Embedded Memory Bits | 2,810,880 | — |
| Embedded Memory Blocks | M9K (9 Kbit each) | 312 M9K blocks |
| Embedded 18x18 Multipliers | 244 | — |
| User I/O Pins | 429 | — |
| Phase-Locked Loops (PLLs) | 4 | — |
| Global Clock Networks | 20 | 20 |
| Process Technology | 65 nm CMOS, low-power | 65 nm low-power CMOS |
| Core Supply Voltage (VCCINT) | 1.2 V | — |
| Configuration Scheme | SRAM, external flash (EPCS) | — |
| Packhaging | 780-ball FBGA (FineLine BGA) | 780-ball FineLine BGA |
| Temperature na Operasyon | 0C to +85C (commercial) | 0C to +85C (commercial, C7 speed grade) |
| Speed Grade | C7 | 7 |
| Tindminan RoHS | Compliant | Compliant |
| Logic Elements | — | 55,856 |
| Embedded Memory | — | 2,396,160 bits (approximately 2.4 Mbit) |
| Embedded Multipliers | — | 156 (18 x 18) |
| User I/O Count | — | 377 |
| PLLs | — | 4 |
| Configuration Memory | — | 8 Kbits (supports PS, FPP, JTAG) |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank) |