EP3SE110F780C4L vs EP3SE110F780C2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE110F780C4L sa pamamagitan ng Intel at EP3SE110F780C2 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE110F780C4L | EP3SE110F780C2 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | NRND |
| Series | Stratix III E | EP3SE110 |
| Number of Logic Elements (LE) | 107,500 | — |
| Number of Logic Array Blocks (LAB) | [DATA_NEEDED: number of LABs] | — |
| Total Memory Bits | 8,936,448 bits | — |
| Number of 18x18 Multipliers | 488 | — |
| Number of PLLs | [DATA_NEEDED: PLL count] | — |
| User I/O Pins | 488 | — |
| Speed Grade | -4 (commercial) | C2 |
| Process Variant | L (low-leakage) | — |
| Temperature na Operasyon | 0C to +85C (commercial) | 0C to +85C (Commercial) |
| Supply Voltage (Core) | [DATA_NEEDED: core voltage] | — |
| Package Type | 780-Ball FCBGA | — |
| Ball Pitch | 1.0 mm | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Technology | 65 nm CMOS | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 3 (per JEDEC J-STD-020) | — |
| Family | — | Stratix III E (Enhanced) |
| Logic Elements (LE) | — | 107,500 |
| Embedded Memory | — | 8,936,448 bits (8.93 Mbit) |
| Maximum User I/O | — | 488 |
| Embedded Multipliers | — | 768 (18x18) |
| PLLs | — | 4 |
| Process Node | — | 65 nm |
| Core Voltage (VCCINT) | — | 1.1 V |
| Packhaging | — | 780-BBGA, FCBGA (FineLine) |
| I/O Standards Supported | — | LVDS, LVTTL, LVCMOS, SSTL, HSTL |