EP3SE110F780I4LN vs EP3SE110F780I3N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE110F780I4LN sa pamamagitan ng Intel at EP3SE110F780I3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Intel
EP3SE110F780I3N - 107.5K Logic Elements, 780-FBGA FPGA | Intel Stratix III E
EP3SE110F780I3N NrndPagsanggunian na paghahambing
| Parametro | EP3SE110F780I4LN | EP3SE110F780I3N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | NRND |
| Series | Stratix III E | — |
| Logic Elements | 107,500 | 107,500 |
| Logic Array Blocks (LABs) | 4,300 | 4,300 |
| Total Memory Bits | 8,936,448 | — |
| User I/O Count | 488 | — |
| Core Voltage | 0.9 V | 1.1 V (range 1.05 V to 1.15 V) |
| Maximum Operating Frequency | 717 MHz | — |
| Packhaging | 780-BBGA, FCBGA (FBGA-780) | 780-pin FC-FBGA (Flip-Chip FineLine BGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Temperature na Operasyon | -40C to +100C (Industrial) | -40 °C to +100 °C (Industrial, "I" grade) |
| Lead-Free / RoHS Status | Lead-free / RoHS compliant | — |
| Process Technology | 40 nm CMOS | 65 nm CMOS |
| DSP Blocks | Yes (DSP-intensive architecture) | — |
| Transceivers | Multi-gigabit embedded transceivers | — |
| Embedded Memory Type | M20K + MLAB | — |
| Family | — | Stratix III E |
| Embedded Memory Bits | — | 8,936,448 (approximately 1.1 MB) |
| Maximum User I/Os | — | 488 |
| Configuration Interface | — | Passive Serial (PS), Fast Passive Parallel (FPP), JTAG (IEEE 1149.1) |
| Boundary-Scan Test | — | Yes, per IEEE Std. 1149.1 |
| Speed Grade | — | 3 (Fast) |
| PLLs | — | Yes, with global and regional clock networks |
| Tindminan RoHS | — | Compliant |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Supply Voltage Tolerance | — | 1.05 V to 1.15 V |