EP3SE260F1517C3N vs EP3SE260F1517C4L Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260F1517C3N sa pamamagitan ng Intel at EP3SE260F1517C4L sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260F1517C3N | EP3SE260F1517C4L |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Huling Pagbili | Obsolete |
| Family | Stratix III E | Stratix III E |
| Logic Elements | 254,400 | 255,000 |
| Embedded Memory | 16,672,768 bits (16.7 Mbits) | — |
| User I/Os | 976 | — |
| DSP Blocks (18x18 Multipliers) | 816 | — |
| M9K Memory Blocks | 1,040 | — |
| Maximum Transceiver Data Rate | 600 Mbps | — |
| PLLs | 4 | 4 per quadrant + 8 fractional PLLs |
| Global Clock Networks | 16 | — |
| Packhaging | 1517-BBGA (FCBGA) | 1517-BBGA, FCBGA (FineLine BGA) |
| Process Technology | 65 nm TSMC low-power CMOS | 65 nm |
| Speed Grade | C3 (commercial) | — |
| Temperature ng Junction na Operasyon | 0 C to +85 C (commercial) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| External Memory Interfaces | DDR3, DDR2, QDRII+, RLDRAM2 | — |
| Embedded Memory Bits | — | 16,672,768 |
| Number of User I/O | — | 976 |
| Core Voltage | — | 1.1 V |
| Maximum Operating Frequency | — | 450 MHz |
| Number of Transceivers | — | 16 |
| Transceiver Data Rate (Max) | — | 1.25 Gbps |
| Multiplier Blocks (18x18) | — | 384 |
| Total TriMatrix Memory | — | 15.04 Mbits (MLAB + M9K + M144K) |
| Temperature na Operasyon | — | 0C to +85C (commercial) |