EP3SE80F780C4N vs EP3SE80F780C4LN Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE80F780C4N sa pamamagitan ng Intel at EP3SE80F780C4LN sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP3SE80F780C4N EP3SE80F780C4LN
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo NRND
Device Family Stratix III E —
Logic Elements 80,000 —
Logic Array Blocks (LABs) 3,200 3,200
User I/Os 488 —
Embedded Memory (bits) 6,843,392 —
Process Technology 65 nm 65 nm
Core Voltage 0.9 V —
I/O Voltage 1.1 V —
Packhaging 780-ball FC-FBGA (FineLine BGA) 780-ball FC-FBGA (Flip-Chip Fine-pitch BGA)
Pin/Package Code F780 —
Speed Grade C4 (commercial) C4
Internal Frequency (max) [DATA_NEEDED: internal max frequency per datasheet] —
Temperature na Operasyon 0 C to 85 C (commercial) —
Uri ng Pagpapasok Surface Mount Surface Mount (BGA)
Configuration Method Serial/Parallel (Quartus II) —
Tindminan RoHS Compliant —
Level ng MSL [DATA_NEEDED: MSL rating] —
Family — Stratix III E
Logic Elements (LE) — 80,000
Total Embedded Memory — 6,843,392 bits (approximately 6.5 Mbit)
User I/O Count — 488
Maximum Operating Frequency — 375 MHz
Core Voltage (VCCINT) — 0.9 V
Operating Temperature Grade — Commercial (C suffix)
Lead-Free / RoHS — Yes (LN suffix)
Configuration Scheme — Active Serial / Passive Parallel / Fast Passive Parallel
Hard IP Blocks — PCIe Gen1, GbE MAC/PHY, DDR2/DDR3 controllers

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