EP4CE1152F23C7N vs EP4CE115F23I7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE1152F23C7N sa pamamagitan ng Altera at EP4CE115F23I7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE1152F23C7N | EP4CE115F23I7N |
|---|---|---|
| Brand | Altera | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone IV E | EP4CE115 (F23 package) |
| Logic Elements (LE) | 114,480 | 114,480 |
| Embedded Memory | 3.9 Mbits (M9K blocks) | — |
| Embedded Multipliers (18x18) | 266 | — |
| User I/Os | 432 | — |
| PLLs | 4 | — |
| Global Clock Networks | 20 | — |
| Packhaging | FBGA-484 (FineLine BGA, 23x23 mm) | 484-FBGA (F23) 23x23 mm, 1.0 mm pitch |
| Core Voltage | 1.0 V (typical) | 1.0 V / 1.2 V |
| Process Technology | 60 nm low-power CMOS | 60 nm low-power CMOS (TSMC) |
| Temperature na Operasyon | 0C to +85C (commercial) | -40C to +100C (Industrial) |
| Speed Grade | C7 | — |
| PCIe Hard IP Block | Yes, Gen1 x1 | — |
| External Memory Support | DDR/DDR2 SDRAM, QDRII SRAM | — |
| Tindminan RoHS | Compliant | Compliant |
| Series | — | Cyclone IV E |
| Embedded Memory Bits | — | 3,981,312 bits |
| Maximum User I/Os | — | 280 |
| Logic Array Blocks (LABs) | — | 7,180 |
| Number of PLLs | — | 4 |
| 18x18 Hardware Multipliers | — | 266 |
| I/O Voltage Banks | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Uri ng Pagpapasok | — | Surface Mount |
| Configuration Method | — | JTAG, Active Serial, Active Parallel |
| Level ng MSL | — | 3 |
| Lead-Free | — | Yes |