EP4CE15U14A7N vs EP4CE10E22C8N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE15U14A7N sa pamamagitan ng Intel at EP4CE10E22C8N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE15U14A7N | EP4CE10E22C8N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $11.10 |
| Family | Cyclone IV E | EP4CE10 |
| Logic Elements (LE) | 15,408 | 10,320 |
| Total Memory Bits | 516,096 bits | — |
| Embedded 18x18 Multipliers | 56 | — |
| General-Purpose PLLs | 4 | — |
| Maximum User I/Os | 165 | — |
| Packhaging | 256-ball UBGA (Ultra-FineLine BGA) | 144-LQFP Exposed Pad (E22) |
| Speed Grade | 7 | 8 |
| Core Voltage | 1.2 V | — |
| Process Node | 60 nm low-power | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Configuration Modes | JTAG, AS, AP, PS | — |
| Bitstream Encryption | AES-128 (security-enhanced variant) | — |
| External Memory Support | DDR/DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| Tindminan RoHS | Compliant (per distributor listings) | Compliant |
| Series | — | Cyclone IV E |
| Embedded Memory (M9K blocks) | — | 46 |
| Embedded Memory (total) | — | 414 Kbit |
| Maximum User I/O | — | 91 |
| Bilang ng Pins | — | 144 |
| Temperature Grade | — | Commercial (C) |
| Process Technology | — | 60 nm low-power |
| PLL Count | — | 2 |
| Configuration Mode | — | JTAG / AS / AP / PS |
| Supply Voltage (Core) | — | 1.0 V to 1.2 V |
| Uri ng Pagpapasok | — | Surface Mount |
| Lead-Free | — | Yes |