EP4CE40F29C7 vs EP4CE40F29C6N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE40F29C7 sa pamamagitan ng Intel at EP4CE40F29C6N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE40F29C7 | EP4CE40F29C6N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone IV E | Cyclone IV E |
| Logic Elements (LE) | 39,600 | — |
| Embedded Memory Bits | 1,161,216 bits | — |
| Embedded 18x18 Multipliers | 113 | — |
| User I/O Count | 532 | — |
| PLLs | 4 | 4 general-purpose |
| Process Technology | 60 nm (TSMC low-power) | — |
| Core Voltage | 1.2 V | 1.2 V (internal regulated) |
| I/O Voltage Support | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| Packhaging | 780-ball FBGA (F29) | 780-ball FBGA (F29) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +85C (Commercial, C7 speed grade) | 0°C to +85°C (commercial) |
| Configuration Modes | Passive Serial, Active Serial, JTAG | Serial, JTAG, Passive Serial, AS |
| Memory Interface Support | DDR, DDR2, QDR II, SDR | — |
| I/O Standards | LVDS, LVPECL, SSTL, HSTL, LVTTL, LVCMOS | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Logic Elements | — | 39,600 |
| Embedded Memory (bits) | — | 1,161,216 |
| Embedded Memory Blocks | — | 113 M9K blocks |
| 18x18 Hardware Multipliers | — | 66 |
| Maximum User I/Os | — | 532 |
| Process Node | — | 60 nm |
| Speed Grade | — | 6 |
| Level ng MSL | — | 3 |