EP4CE6F17C8 vs EP4CE10F17C8N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE6F17C8 sa pamamagitan ng Intel at EP4CE10F17C8N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE6F17C8 | EP4CE10F17C8N |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Device Family | Cyclone IV E | — |
| Logic Elements (LEs) | 6,272 | 10320 |
| Logic Array Blocks (LABs) | 392 | — |
| Embedded Memory Bits | 276,480 | — |
| M9K Memory Blocks | 30 | — |
| Embedded 18 x 18 Multipliers | 15 | — |
| PLLs | 2 | 4 |
| Global Clock Networks | 10 | — |
| Maximum User I/Os | 179 | 179 |
| Packhaging | 256-ball FBGA (F17), 1.0 mm pitch, 17 x 17 mm | 256-FBGA (F17), 17x17 mm |
| Process Technology | 60 nm low-power SRAM | 60 nm low-power SRAM |
| Core Supply Voltage | 1.0 V to 1.2 V | — |
| Temperature na Operasyon | 0 C to 85 C (commercial, C8 speed grade) | 0C to +85C (Commercial) |
| Speed Grade | C8 | — |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS), Fast Passive Parallel (FPP) | — |
| I/O Standards Supported | LVTTL, LVCMOS, LVDS, SSTL, HSTL | — |
| Tindminan RoHS | Compliant | Compliant |
| Family | — | Cyclone IV E |
| Embedded Memory | — | 423936 bits (414 Kbit) |
| Embedded Multipliers (18x18) | — | 23 |
| Core Voltage (VCCINT) | — | 1.15 V to 1.25 V |
| I/O Voltage (VCCIO) | — | 1.2 V to 3.3 V |
| Maximum Internal Frequency | — | 402 MHz |
| Configuration Method | — | SRAM, requires external EPCS/EPCQ flash |
| Uri ng Pagpapasok | — | Surface Mount (BGA) |