EP4CE6F17I8LN vs EP4CE6F17I8L Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE6F17I8LN sa pamamagitan ng Altera at EP4CE6F17I8L sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CE6F17I8LN EP4CE6F17I8L
Brand Altera Altera
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Series Cyclone IV E Cyclone IV E
Logic Elements (LEs) 6,272 —
Logic Array Blocks (LABs) 392 —
Total RAM Bits 276,480 (270 Kbits embedded memory, 30 M9K blocks) —
Maximum User I/Os 179 —
Embedded 18x18 Multipliers 15 —
PLLs 4 —
Temperature na Operasyon -40C to +100C (Industrial) —
Core Voltage 1.0V to 1.2V (internal) —
I/O Voltage 1.2V to 3.3V (per bank) —
Supply Voltage (VCCINT) 1.2V (nominal) —
Packhaging FBGA-256 (17 x 17 mm, 1.0 mm pitch) 256-LBGA (FBGA-256, 17x17 mm, 1.0 mm pitch)
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration JTAG, Active Serial (AS), Passive Serial (PS) —
Tindminan RoHS Compliant (lead-free FBGA) Compliant
Process Node 60 nm (low-power TSMC) —
Logic Elements — 6,272
Total Memory Bits — 276,480
Number of Logic Array Blocks — 392
Embedded Multipliers (18x18) — 15
User I/O Pins — 179
Number of I/O Banks — 8
Number of PLLs — 2
Supply Voltage (Core) — 1.2 V
Hanay ng Temperature na Operasyon — -40C to +100C (Industrial)
Configuration Method — JTAG, Active Serial (AS), Passive Serial (PS)
Process Technology — 60 nm low-power CMOS
Level ng MSL — 3 (168 hours)

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