EP4CE75F29C9L vs EP4CE75F29C8N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE75F29C9L sa pamamagitan ng Intel at EP4CE75F29C8N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CE75F29C9L EP4CE75F29C8N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family Cyclone IV E —
Logic Elements 75,408 —
Logic Array Blocks (LABs) 4,633 —
Embedded Memory (bits) 2,810,880 —
M9K Memory Blocks 305 —
Embedded 18x18 Multipliers 426 —
PLLs 4 —
Global Clock Networks 20 —
Maximum User I/O Pins 274 —
Packhaging 780-ball FBGA (F29) 780-FBGA (29x29 mm, F29)
Pitch 1.0 mm —
Core Voltage 1.2 V —
Temperature na Operasyon 0C to +85C (commercial) 0C to +85C
Speed Grade C9 (commercial -8) —
Process Technology TSMC 60 nm low-power —
Configuration Modes JTAG, Active Serial, Active Parallel, Passive Serial —
Lead-Free / RoHS Yes (lead-free finish) —
Series — Cyclone IV E
Logic Elements (LE) — 75,408
Number of LABs/CLBs — 4713
Total RAM Bits — 2,810,880
Number of I/O — 426
Number of Logic Elements/Cells — 75,408
Number of Gates — [DATA_NEEDED: gates count]
Voltage - Supply — 1.15 V to 1.25 V
Uri ng Pagpapasok — Surface Mount
Number of Multipliers (18x18) — 200
Number of PLLs — 4
Configuration Method — JTAG / Active Serial / Passive Serial
I/O Standards — LVDS, LVTTL, LVCMOS, SSTL, HSTL
Tindminan RoHS — Compliant
Process Node — 60 nm

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