EP4CE75F29I8LN vs EP4CE75F29I7 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE75F29I8LN sa pamamagitan ng Altera at EP4CE75F29I7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CE75F29I8LN EP4CE75F29I7
Brand Altera Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family Cyclone IV E —
Device Logic Elements 75,408 —
Logic Array Blocks (LABs) 4,713 —
Embedded Memory Bits 2,810,880 bits —
Embedded Multipliers (18x18) 244 —
User I/O Count 426 426
PLLs 4 4
Process Technology 60 nm —
Core Supply Voltage 1.2 V —
Packhaging 780-ball FBGA (F29), 29x29 mm, 1.0 mm pitch 780-ball FBGA (FineLine BGA)
Uri ng Pagpapasok Surface Mount Surface Mount (BGA)
Temperature na Operasyon -40C to +100C (Industrial) -40 °C to +100 °C (Industrial)
Lead Free / RoHS Yes / Compliant —
Speed Grade 8 —
Configuration Mode AS, PS, JTAG, FPP —
Bitstream Encryption AES-128 supported —
Series — Cyclone IV E
Manufacturer — Intel (formerly Altera)
Logic Elements (LEs) — 75,408
Embedded Memory (bits) — 2,810,880
Embedded Memory Blocks — 274 (M9K)
Embedded 18×18 Multipliers — 200
Process Node — 60 nm low-power CMOS
Core Voltage (VCCINT) — 1.0 V / 1.2 V selectable
Configuration Modes — JTAG, Active Serial (AS), Passive Serial (PS)
I/O Standards Supported — LVDS, LVTTL, LVCMOS, SSTL, HSTL
External Memory Interfaces — DDR/DDR2 SDRAM, QDRII SRAM
Tindminan RoHS — Compliant
Level ng MSL — 3 (168 hours)

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