EP4CGX50DF23C7N vs EP4CGX50CF23C7N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CGX50DF23C7N sa pamamagitan ng Intel at EP4CGX50CF23C7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CGX50DF23C7N EP4CGX50CF23C7N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family Cyclone IV GX Cyclone IV GX
Logic Elements 49,888 —
Configurable Logic Blocks (CLBs) 3,118 —
Total RAM Bits 2,432 Kbit (≈ 304 KB) —
Embedded 18x18 Multipliers 66 —
PLLs 2 —
Global Clock Networks 8 (with up to 16 clock pins per region) —
Number of I/O Pins 290 —
Transceivers Up to 8 channels, 3.125 Gbps —
Process Technology 60 nm 60 nm TSMC low-power
Core Supply Voltage (VCCINT) 1.15 V to 1.25 V (nominal 1.2 V) —
Temperature na Operasyon 0 °C to 85 °C (commercial) -40C to +85C (commercial)
Packhaging 484-ball FBGA (Plastic BGA, S-PBGA-B484, 23x23 mm) 484-FBGA (F23, 23 x 23 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Modes Passive Serial (PS), Active Serial (AS), JTAG JTAG, Active Serial (EPCS), Passive Serial, Fast Passive Parallel
Supported Memory Interfaces DDR2 SDRAM, QDRII SRAM, RLDRAM II —
Tindminan RoHS Compliant (Pb-free variant) Compliant (lead-free)
Level ng MSL 3 (168 hours) —
Logic Elements (LE) — 49,888
Embedded Memory (Bits) — 2,562,048 (2.5 Mb)
User I/O — 290
Logic Array Blocks — 47
Multi-Gigabit Transceivers — 4 channels up to 3.125 Gbps
Hard Memory Controllers — Yes (DDR/DDR2/QDRII/QDRII+/RLDRAM II)
Core Voltage — 1.2 V
I/O Voltage Standards — LVTTL, LVCMOS, LVDS, SSTL, HSTL (1.2V-3.3V)
Speed Grade — C7 (commercial)

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