EP4S40G2F40I2NAB vs EP4S100G2F40I3G Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4S40G2F40I2NAB sa pamamagitan ng Intel at EP4S100G2F40I3G sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Intel
EP4S40G2F40I2NAB - Stratix IV GT FPGA, 228K LE, 1517-FCBGA | Intel
EP4S40G2F40I2NAB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | EP4S40G2F40I2NAB | EP4S100G2F40I3G |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Stratix IV GT | Stratix IV |
| Logic Elements (LE) | 228,000 | — |
| Adaptive Logic Modules (ALMs) | [DATA_NEEDED: ALM count] | — |
| Total Embedded Memory Bits | 17,544,192 | — |
| Embedded Memory Type | M9K + M144K blocks | — |
| User I/O Pins | 654 | — |
| Multi-Gigigabit Transceivers | 48 (Stratix IV GT, configuration-dependent) | — |
| Transceiver Data Rate | 600 Mbps to 11.3 Gbps | — |
| PLLs | 8 | — |
| Hard IP for PCIe | Gen1 / Gen2 endpoints | — |
| Core Voltage | 0.95 V | — |
| Process Technology | 40 nm | 40 nm |
| Packhaging | 1517-ball FCBGA (F40) | 1517-BBGA, FCBGA (40x40 mm) |
| Temperature na Operasyon | -40C to +100C (industrial, I2) | — |
| Level ng MSL | 4 (72 hours floor life) | — |
| Uri ng Pagpapasok | Surface Mount (flip-chip BGA) | Surface Mount (BGA) |
| Series | — | Stratix IV GT |
| Logic Elements | — | 228,000 |
| Logic Array Blocks (LABs) | — | 91,200 |
| Total RAM Bits | — | 17,544,192 |
| Operating Voltage (Core) | — | 0.86 V to 1.15 V |
| Hanay ng Temperature na Operasyon | — | -40 °C to 100 °C Tj (industrial) |
| Number of I/O | — | [DATA_NEEDED: pin/ball count - exact user I/O count] |
| Transceivers | — | [DATA_NEEDED: number of high-speed transceivers] |
| DSP Blocks | — | [DATA_NEEDED: DSP block count] |
| User Flash Memory | — | [DATA_NEEDED: configuration flash size] |
| Configuration Scheme | — | SRAM-based, configuration via JTAG/AS/PS/Fast passive parallel |
| Tindminan RoHS | — | Compliant |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | 3 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |