EPF10K30EFC256-2 vs EPF10K30EFC256-1X Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EPF10K30EFC256-2 sa pamamagitan ng Altera at EPF10K30EFC256-1X sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Intel
EPF10K30EFC256-1X - FLEX 10KE FPGA, 30K Gates, 256-BGA | Intel / Altera
EPF10K30EFC256-1X ObsoletePagsanggunian na paghahambing
| Parametro | EPF10K30EFC256-2 | EPF10K30EFC256-1X |
|---|---|---|
| Brand | Altera | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements / Cells | 1728 | — |
| System Gates | 30,000 | — |
| Embedded RAM Bits | 24,576 | — |
| Logic Array Blocks (LABs) | 216 | 216 |
| User I/Os | 176 | — |
| Packhaging | 256-FBGA (17x17 mm) | 256-ball FBGA, 17 x 17 mm, 1.0 mm pitch (FineLine BGA) |
| Core Supply Voltage | 2.375 V to 2.625 V (typ 2.5 V) | 2.5 V |
| Internal Operating Frequency | 80 MHz | — |
| Propagation Delay | 0.6 ns | — |
| Technology Node | 0.22 um CMOS | — |
| Temperature na Operasyon | 0 C to 70 C (commercial) | 0 °C to +70 °C (commercial) |
| Configuration Method | SRAM, JTAG (IEEE 1149.1), Passive Serial | SRAM, JTAG (IEEE 1149.1) |
| Tindminan RoHS | [DATA_NEEDED: rohs status] | — |
| Level ng MSL | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Speed Grade | -2 (commercial, mid-speed) | -1X (fastest commercial) |
| Logic Elements | — | 1728 |
| Typical Gates | — | 30,000 |
| Embedded Memory (EAB RAM) | — | 24,576 bits (6 EABs of 4 Kbit each) |
| User I/O | — | 176 |
| Maximum Internal Frequency | — | 250 MHz |
| Propagation Delay (tpd) | — | 0.4 ns to 0.6 ns |
| Process Technology | — | 0.22 µm CMOS |
| MultiVolt I/O Support | — | 2.5 V / 3.3 V / 5 V |
| Phase-Locked Loops | — | 4 |
| Compliance | — | RoHS (check distributor for specific lot), Pb-free option available |