EPM570GT100I5N vs EPM570GT100C4N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EPM570GT100I5N sa pamamagitan ng Altera at EPM570GT100C4N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Altera
EPM570GT100I5N - 440-Macrocell CPLD, 5.4ns, MAX II, 100-TQFP | Altera
EPM570GT100I5N ✓ NakahandaPagsanggunian na paghahambing
| Parametro | EPM570GT100I5N | EPM570GT100C4N |
|---|---|---|
| Brand | Altera | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | MAX II | — |
| Logic Elements | 570 LE | — |
| Equivalent Macrocells | 440 macrocells | 440 |
| Number of LABs | 57 | — |
| User I/Os | 76 | — |
| Maximum Operating Frequency | 304 MHz | — |
| Propagation Delay (tPD1) | 5.4 ns | [DATA_NEEDED: tPD1 value] |
| Operating Supply Voltage (Core) | 1.8 V | — |
| User Flash Memory | 8 Kbit | — |
| Packhaging | 100-pin TQFP (GT100) | TQFP-100 (11 x 11 mm, 0.5 mm pitch) |
| Uri ng Pagpapasok | Surface Mount (SMD/SMT) | Surface Mount (Gull Wing) |
| Temperature na Operasyon | -40 °C to +100 °C (Industrial) | Commercial (0C to +85C) |
| Process | 0.18 µm, 6-layer-metal flash | — |
| JTAG Support | Yes (IEEE 1149.1 boundary-scan) | — |
| MultiVolt I/O Support | 1.8 V / 2.5 V / 3.3 V | 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Internal Oscillator | Yes | — |
| Non-volatile Configuration | Yes (instant-on, no external boot PROM) | — |
| Tindminan RoHS | Compliant | Compliant |
| Logic Elements (LE) | — | 570 |
| Maximum User I/O | — | 76 |
| User Flash Memory (UFM) | — | 8 Kbits |
| Core Voltage (VCCINT) | — | 1.8 V |
| Speed Grade | — | C4 (-4) |
| Maximum Frequency (fCNT) | — | [DATA_NEEDED: fCNT value] |
| Process Technology | — | 0.18 µm 6-layer-metal flash |
| In-System Programmability | — | Yes (JTAG 1149.1) |
| Level ng MSL | — | 3 |