FDG6332C vs FDG6332C-F085 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng FDG6332C sa pamamagitan ng onsemi at FDG6332C-F085 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | FDG6332C | FDG6332C-F085 |
|---|---|---|
| Brand | onsemi | onsemi |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Huling Pagbili |
| Manufacturer | onsemi (formerly Fairchild Semiconductor) | onsemi |
| Product Type | MOSFET Array (N-channel and P-channel, complementary) | — |
| Process Technology | PowerTrench | — |
| Drain-to-Source Voltage (VDS) | 20 V | 20 V |
| N-Channel Continuous Drain Current (ID) | 700 mA | — |
| P-Channel Continuous Drain Current (ID) | 600 mA | — |
| Total Package Power Dissipation (PD) | 300 mW | — |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 415 °C/W (still air, JEDEC PCB) | — |
| Packhaging | SC-88 (SC-70-6), 6-pin | SC-88 / SC-70-6 (SOT-363) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (TJ max) | -55C to +150C (junction) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| On-State Resistance N-Channel (RDS(on)) | [DATA_NEEDED: RDS(on) @ VGS] | — |
| On-State Resistance P-Channel (RDS(on)) | [DATA_NEEDED: RDS(on) @ VGS] | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | [DATA_NEEDED: MSL rating] |
| Configuration | Dual independent MOSFETs (N + P) | Dual independent FETs (N+P) |
| Series | — | PowerTrench |
| FET Type | — | N- and P-Channel Complementary Array |
| Continuous Drain Current - N-FET (ID) | — | 700 mA |
| Continuous Drain Current - P-FET (ID) | — | 600 mA |
| Power Dissipation (PD) | — | 300 mW |
| Automotive Qualification | — | AEC-Q101 / -F085 grade |
| Technology | — | PowerTrench (trench-gate) |
| Lead-Free | — | Yes |
| VGS(th) - N-FET (typ) | — | [DATA_NEEDED: VGS threshold] |
| RDS(on) - N-FET at VGS=4.5V (typ/max) | — | [DATA_NEEDED: on-resistance] |