H5TC4G63CFR-H9J vs H5TC4G63CFR-H9A Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63CFR-H9J sa pamamagitan ng SK hynix at H5TC4G63CFR-H9A sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

SK hynix
H5TC4G63CFR-H9J H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J ✓ Nakahanda
SK hynix
H5TC4G63CFR-H9A H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro H5TC4G63CFR-H9J H5TC4G63CFR-H9A
Brand SK hynix SK hynix
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory DDR3L SDRAM DDR3L SDRAM
Density 4Gb —
Organisasyon 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V +0.100/-0.067V —
Speed Grade -H9 (1866 Mbps / PC3-14900) —
Packhaging 96-ball TFBGA 96-ball TFBGA
Number of Terminals 96 96
Temperature Grade Industrial —
Lead-Free Yes Yes
Wala sa Halogen Yes Yes
RoHS Compliant Yes —
Clock Input Fully differential (CK, CK) —
Data Strobe Differential (DQS, DQS) —
On-Chip DLL Yes Yes
Data Mask (DM) Yes —
Memory Density — 4Gb (4294967296 bit)
Supply Voltage (VDD) — 1.35V + 0.100 / - 0.067V
Supply Voltage (VDDQ) — 1.35V + 0.100 / - 0.067V
Package Shape — RECTANGULAR
Hanay ng Temperature na Operasyon — [DATA_NEEDED: Operating temperature range]
Tindminan RoHS — Compliant
Rate ng Data — [DATA_NEEDED: Data rate (e.g., 1866 Mbps)]
Latensya ng CAS — [DATA_NEEDED: CAS latency]
Burst Length — 8, 4 (with burst chop)
Differential Clock Inputs — Yes (CK, CK)
Differential Data Strobe — Yes (DQS, DQS)
DM (Data Mask) — Yes

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