IAUC100N04S6N028ATMA1 vs IAUCN10S7L290TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC100N04S6N028ATMA1 sa pamamagitan ng Infineon at IAUCN10S7L290TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ NakahandaInfineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC100N04S6N028ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 40V | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 100 A | — |
| Pulsed Drain Current (I_DM) | 400 A | — |
| R_DS(on) max @ V_GS=10V | 2.8 mΩ (typical) | — |
| Gate Threshold Voltage (V_GS(th)) | 1.5 V to 2.5 V | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g in nC] | — |
| Power Dissipation (P_D) at T_C=25°C | 62 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TDSON-8 (TDSON-8) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | — |
| Tindminan RoHS | Compliant | — |
| Product Family | — | OptiMOS™ 7 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q100 qualified |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |