IAUC120N04S6N010ATMA1 vs IAUCN04S7N015GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUC120N04S6N010ATMA1 sa pamamagitan ng Infineon at IAUCN04S7N015GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ Nakahanda
Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUC120N04S6N010ATMA1 IAUCN04S7N015GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 40 V —
Continuous Drain Current (Id, Tc) 150 A —
Power Dissipation (Pd, Tc) 150 W —
RDS(on) at VGS=10V (typ) 1.0 mΩ —
RDS(on) at VGS=10V (max per LCSC excerpt) 1.03 mΩ —
Gate-Source Threshold (VGS(th), typ) 3 V (at 90 µA) —
Technology OptiMOS 6 —
Packhaging PG-TDSON-8-34 (5x6 mm leadless) PG-THSOG-4-1 (SSO4G 5x6) surface mount
Uri ng Pagpapasok Surface Mount Surface Mount (IMS-compatible source-down)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Hanay ng Temperature na Operasyon -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) —
Level ng MSL 1 (per JEDEC J-STD-020, per Infineon TDSON family) 1 (per JEDEC J-STD-020)
Tindminan RoHS Compliant Compliant
Gate Drive Recommendation 10 V VGS for full RDS(on) spec —
Polarity Single N-channel —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 165 A (Tc)
Power Dissipation (P_D) — 96 W (Tc)
R_DS(on) max — 1.53 mΩ at V_GS=10 V
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Temperature ng Junction na Operasyon — -55C to +175C
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]

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