IAUZ40N08S5N100ATMA1 vs BSZ070N08LS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUZ40N08S5N100ATMA1 sa pamamagitan ng Infineon at BSZ070N08LS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUZ40N08S5N100ATMA1 | BSZ070N08LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS-5 N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 40 A | — |
| Power Dissipation (PD, Tc=25°C) | 68 W | — |
| On-Resistance RDS(on) max | 10 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg typ | 24.2 nC @ VGS=10 V | — |
| Input Capacitance Ciss | 1591 pF @ VDS=40 V | — |
| Gate-Source Voltage VGS max | ±20 V | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (TJ) | — |
| Packhaging | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, unleaded reflow) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Tindminan RoHS | Compliant | Compliant |
| Channel Type | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS™ 5 (80 V logic-level) |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TC | — | 74 A (Tc, per datasheet) |
| Continuous Drain Current (ID) at TA / Si | — | [DATA_NEEDED: TA-rated ID] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed] |
| On-Resistance RDS(on) max @ VGS=10 V | — | 7 mΩ |
| On-Resistance RDS(on) @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate Threshold Voltage VGS(th) | — | Logic-level (drive compatible with 4.5 V) |
| Total Gate Charge Qg | — | [DATA_NEEDED: total Qg] |
| Power Dissition PD max at TC | — | 69 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +150 °C |
| Avalanche Rated | — | Yes |
| Reel Quantity | — | 5000 per 13-inch reel (T&R) |