IKD15N60RFATMA1 vs IGD06N60TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IKD15N60RFATMA1 sa pamamagitan ng Infineon at IGD06N60TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IKD15N60RFATMA1 | IGD06N60TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | IGBTs | Transistors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) | — |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC at TC=25C) | 30 A | — |
| Continuous Collector Current (IC at TC=100C) | 15 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Gate-Emitter Voltage (VGES) | +/-20 V | — |
| Gate-Emitter Threshold (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) | — |
| Maximum Power Dissipation (Ptot) | 250 W | 88 W |
| Temperature ng Junction na Operasyon | -40C to +175C | -40 °C to +175 °C |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) | — |
| Packhaging | PG-TO252-3 (DPAK), 3 pins (2 + tab) | PG-TO252-3-11 (DPAK / TO-252) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast | — |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) | — |
| RoHS Compliance | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous Collector Current (IC) at TC=25°C | — | 12 A |
| Continuous Collector Current (IC) at TC=100°C | — | 6 A |
| Maximum Pulsed Collector Current (ICM) | — | 18 A (per datasheet) |
| Gate-Emitter Voltage (VGE) | — | ±20 V |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | — | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | — | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Turn-on Switching Energy (Eon) | — | [DATA_NEEDED: Eon] |
| Turn-off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff] |
| Integrated Diode | — | Yes, soft-recovery emitter-controlled diode |
| Storage Temperature | — | -55 °C to +150 °C |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |